Liang Junwu, founder of my country’s early semiconductor silicon materials, passed away at the age of 89

IT House reported on June 24 that the Institute of Semiconductors, Chinese Academy of Sciences issued an obituary on June 23. Academician of the Chinese Academy of Engineering, researcher of the Institute of Semiconductors, Chinese Academy of Sciences, and a well-known semiconductor materials scientist in my countryLiang JunwuDue to ineffective medical treatment, Mr. unfortunately passed away in Beijing at 17:00 on June 23, 2022.89 years old.

IT House learned that the Institute of Semiconductors of the Chinese Academy of Sciences wrote in “The Life of Academician Liang Junwu”:

Academician of Chinese Academy of Engineering, researcher of Institute of Semiconductors, Chinese Academy of Sciences, famous semiconductor materials scientist in my country,The founder of my country’s early semiconductor silicon materialsMr. Liang Junwu unfortunately passed away in Beijing at 17:00 on June 23, 2022, at the age of 89. The Semiconductor Research Institute and the field of semiconductor material science regret the loss of such a major academic leader; the Liang family is infinitely saddened by the loss of such a beloved relative; the students and disciples are deeply saddened by the loss of such a good teacher.

Academician Liang Junwu was born on September 18, 1933 in Wuhan, Hubei. He graduated from Wuhan University in 1955, majoring in physics. From 1956 to 1960, he studied at the Moscow Baykov Institute of Metallurgy of the former Soviet Academy of Sciences and obtained an associate doctorate. In the same year, he worked at the Institute of Semiconductors, Chinese Academy of Sciences. For more than 60 years, he has made important contributions to the discipline construction, technological innovation, industrial revitalization and personnel training in the field of semiconductor materials in my country. Academician Liang Junwu has successively won the second prize for scientific and technological achievements of the State Science and Technology Commission and the second prize for new products each, the third prize of the National Science and Technology Progress Award once, the first prize of the Chinese Academy of Sciences for major achievements and scientific and technological progress three times, and the second prize four times. There are more than 20 scientific and technological awards such as the second prize of the Municipal Science and Technology Progress Award. In 1997, he was elected as an academician of the Chinese Academy of Engineering.

Academician Liang Junwu has worked diligently and profoundly in the field of semiconductor material science, and has achieved a series of important scientific research results. In the 1960s, the key technology of melting silicon in high-purity area was solved. In 1964, GaAs liquid phase epitaxy materials for room temperature lasers were prepared. In 1979, a high-quality silicon zone melting single crystal with no dislocation, no eddy, low micro-defect, low carbon and controllable oxygen content was successfully developed for large-scale integrated circuits. In the 1980s, the nitrogen-doped neutron transmutation silicon single crystal was pioneered, which solved the problems of the integrity and uniformity of the silicon wafer. In the early 1990s, he studied MOCVD growth of superlattice quantum well materials, and promoted Chinese superlattice quantum well materials to a practical level in terms of crystal integrity, electrical properties and superlattice structure control. Presided over the “Seventh Five-Year Plan” and “Eighth Five-Year Plan” key silicon epitaxy research, and completed the research on microcomputer control, light heating, low-voltage silicon epitaxy material growth and equipment. He also plays an active role in the research and industrialization of polysilicon for solar cells.