Changxin Storage Publishes Patent of “Semiconductor Lithography Compensation Method”

IT House reported on July 2 that Changxin Storage Technology Co., Ltd. recently published a number of patents, one of which is called “Semiconductor Lithography Compensation Method”, and the publication number is CN114675505A.

The patent abstract shows that the embodiment of the present application belongs to the technical field of semiconductor manufacturing, and specifically relates to a semiconductor lithography compensation method, which includes: performing lithography on a wafer through a combination of machines, the combination of which at least includes a first machine and a second machine performing photolithography on the first machine to obtain a first exposure structure; obtaining a first measurement value of the overlay error of the first exposure structure; and compensating the initial delivery value of the second machine according to the first measurement value. In the process of fabricating the semiconductor structure, by measuring the overlay error of the first exposure structure processed by the first machine, the first measured value can be compensated for the initial delivery value of the second machine, so as to obtain the second The optimal delivery value of the machine, when the second machine performs lithography,The second machine performs photolithography processing according to its optimal delivery value, which is beneficial to ensure the accuracy of the overlay error of the exposure structure formed by the subsequent processing of the second machine, thereby reducing the number of rework.

According to the official website, the business of Changxin Storage Technology Co., Ltd. was launched in Hefei, Anhui Province in 2016. The company has built the first 12-inch fab and put it into production. It is the largest and most technologically advanced DRAM design and manufacturing integrated enterprise in mainland China.